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Abstract


Ebeam resist removal is an essential step for multi-layer lithography processes where a clean and contamination free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by full NMP solution cycle remves the resist fully and leave the surface contamination free.

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  1. EPFL - LPQM

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Published 1 week, 6 days ago

DOI 10.5281/zenodo.4884750
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    1 week, 6 days ago