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Photo by Mohammad Bereyhi, EPFL - LPQM

Results (5)


Fabrication of aluminium airbridges for microwave interconnects on lithium niobate on Damascene silicon nitride photonic chips

Here we discuss the wafer-scale fabrication process flow of aluminium airbridges for microwave (MW) interconnects on lithium niobate on Damascene silicon nitride (LNOD) photonic chips. We also discuss the subsequent chip release procedure that preserves the bridges allowing for safe release of these delicate structures.

Version
Version 1.1
Date
1 year, 5 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
1004
Downloads
384
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1

Electron beam lithography and pattern transfer on membrane grids for transmission electron microscopy

We describe a fabrication process for electron beam lithography (EBL) and the following pattern transfer steps on transmission electron microscope (TEM) grids. For demonstration purposes, we use commercial off-the-shelf TEM grids consisting of a thin suspended silicon nitride membrane on a silicon frame supporting substrate. For the pattern transfer, we demonstrate both an additive patterning technique with metal deposition and lift-off, and a subtractive patterning technique with reactive ion etching. This process could enable direct ...

Version
Version 1.1
Date
2 years, 5 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
1636
Downloads
511
Liked
3

High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
3 years, 9 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
1661
Downloads
824
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2

Fabrication of high-aspect ratio Si_3N_4 nanobeam resonators

We describe the fabrication of high-stress Si_3N_4 nanobeam resonators with high aspect ratios exceeding lengths of 3.5mm. The lowest order out-of-plane modes of these nanobeams have quality factors of Q\geq 10^6 with fundamental mode frequencies lying in the range of 80-500kHz. The beams are fabricated from high-stress, 20-50nm-thick films of Si_3N_4 deposited via LPCVD on standard silicon wafers. The beams are patterned via electron beam lithography and deep reactive ion etching. The underlying silicon is ...

Version
Version 1.0
Date
3 years, 9 months ago
Lab
EPFL - LPQM
Comments
2
Viewed
1522
Downloads
704
Liked
2

UV light from ambient environment increases the \mathrm{Si_3N_4} etch rate in \mathrm{XeF_2} etching

Releasing mechanical structures is a fundamental step in MEMS processing. Given the wide usage of silicon nitride ( \mathrm{Si_3N_4} ) on silicon (Si) carrier due to high stress and high mechanical Q factors, high etching selectivity between \mathrm{Si_3N_4} and Si is very crucial for the release process. Here we demonstrate that UV light from ambient light sources in a cleanroom environment (EPFL - CMi) can increase the etch rate of \mathrm{Si_3N_4} ...

Version
Version 1.0
Date
3 years, 9 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
1191
Downloads
675
Liked
1