Here I explain the KOH simulator software (ACES) from University of Chicago [1] for a chain process of DRIE followed by KOH undercut. This software is very simple yet power to understand how Si etching works and design the mask to optimize the etch speed and crystal planes [2].
Results (5)
Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.
In this report I monitor a full successful cycle of critical point drying (CPD) run for drying MEMS sensors after wet release using KOH etching. The pressure and temperature of the CPD tool (Tousimis) is monitored during the process and plotted in a P-T diagram with \mathrm{CO_2} critical point. A few notes for higher yield in the drying process are mentioned in this report as well.
A few important points in data conversion and mask processing of multilayered Ebeam lithography is discussed. The conversion is done using Layout Beamer software at EPFL CMi cleanroom.
This is a method to improve the quality of lithography - in particular electron beam lithography (EBL). During an EBL exposure the electrons undergo different scattering processes. One scattering process that plays an important role is the back scattering of the electrons from the substrate or different stacks of thin film present in the exposure stack. As a result the actual dose that the resist sees is quite different that the original exposure dose. This ...
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