Search

Tooltip
Photo by Simon Escobar Steinvall, EPFL - LMSC

Results (5)


Fabrication of aluminium airbridges for microwave interconnects on lithium niobate on Damascene silicon nitride photonic chips

Here we discuss the wafer-scale fabrication process flow of aluminium airbridges for microwave (MW) interconnects on lithium niobate on Damascene silicon nitride (LNOD) photonic chips. We also discuss the subsequent chip release procedure that preserves the bridges allowing for safe release of these delicate structures.

Version
Version 1.1
Date
1 year, 5 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
981
Downloads
372
Liked
1

Electron beam lithography and pattern transfer on membrane grids for transmission electron microscopy

We describe a fabrication process for electron beam lithography (EBL) and the following pattern transfer steps on transmission electron microscope (TEM) grids. For demonstration purposes, we use commercial off-the-shelf TEM grids consisting of a thin suspended silicon nitride membrane on a silicon frame supporting substrate. For the pattern transfer, we demonstrate both an additive patterning technique with metal deposition and lift-off, and a subtractive patterning technique with reactive ion etching. This process could enable direct ...

Version
Version 1.1
Date
2 years, 5 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
1607
Downloads
503
Liked
3

Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
2 years, 8 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
2096
Downloads
761
Liked
3

Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Version
Version 1.0
Date
2 years, 9 months ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
Comments
0
Viewed
1449
Downloads
558
Liked
3

Transition metal dichalcogenide metamaterials with atomic precision

Here we will discuss our novel anisotropic wet-etching method that allows scalable fabrication of TMD metamaterials with atomic precision, combined with traditional nanolithography techniques.[1] We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are atomically sharp and exclusively zigzag-terminated. This allows us to fabricate interesting hexagonal nanostructures of predefined order and complexity, including a few nanometer thin nanoribbons and nanojunctions.

Version
Version 1.0
Date
2 years, 9 months ago
Lab
DTU - Quantum Light Source
Comments
0
Viewed
1385
Downloads
572
Liked
3