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This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Releasing mechanical structures is a fundamental step in MEMS processing. Given the wide usage of silicon nitride ( \mathrm{Si_3N_4} ) on silicon (Si) carrier due to high stress and high mechanical Q factors, high etching selectivity between \mathrm{Si_3N_4} and Si is very crucial for the release process. Here we demonstrate that UV light from ambient light sources in a cleanroom environment (EPFL - CMi) can increase the etch rate of \mathrm{Si_3N_4} ...