Monolithically integrated InGaAs microdisks on Si for nanophotonics

Abstract

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This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further by cladding them with metal.

References

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- P. Tiwari, et al., CLEO Europe, CK 4.2, 2021. - P. Tiwari et al., Optics Express 29( 3), 2021. (https://doi.org/10.1364/OE.412449)