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Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

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Version 1.0
Date
3 months, 2 weeks ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
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Effect of LPCVD \mathrm{Si_3N_4} deposition on \mathrm{Al_2O_3} etch-stop films

Alumina (\mathrm{Al_2O_3}) films are widely used in photonics and superconducting circuits as an etch stop or passivation layer. In silicon nitride (\mathrm{Si_3N_4}) fabrication, a widely used etching recipe is dry etching using a mixture of \mathrm{SF_6/CHF_3} gasses. In case of multi-stacked materials, one might be interested to etch the \mathrm{Si_3N_4} layer with an stop layer to protect the rest of the stack from the etching step. \mathrm{Al_2O_3} is a great etch stop layer for \mathrm{Si_3N_4} ...

Version
Version 1.0
Date
1 year, 3 months ago
Lab
EPFL - LPQM
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562
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