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Here we discuss the wafer-scale fabrication process flow of aluminium airbridges for microwave (MW) interconnects on lithium niobate on Damascene silicon nitride (LNOD) photonic chips. We also discuss the subsequent chip release procedure that preserves the bridges allowing for safe release of these delicate structures.

We describe a fabrication process for electron beam lithography (EBL) and the following pattern transfer steps on transmission electron microscope (TEM) grids. For demonstration purposes, we use commercial off-the-shelf TEM grids consisting of a thin suspended silicon nitride membrane on a silicon frame supporting substrate. For the pattern transfer, we demonstrate both an additive patterning technique with metal deposition and lift-off, and a subtractive patterning technique with reactive ion etching. This process could enable direct ...

This short article describes a method to separate a wafer into photonic chips or dice, using dry etching and backside grinding. This method enables smooth chip facets that are advantageous for edge coupling with fibers or other chips.

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Alumina ($\mathrm{Al_2O_3}$) films are widely used in photonics and superconducting circuits as an etch stop or passivation layer. In silicon nitride ($\mathrm{Si_3N_4}$) fabrication, a widely used etching recipe is dry etching using a mixture of $\mathrm{SF_6/CHF_3}$ gasses. In case of multi-stacked materials, one might be interested to etch the $\mathrm{Si_3N_4}$ layer with an stop layer to protect the rest of the stack from the etching step. $\mathrm{Al_2O_3}$ is a great etch stop layer for $\mathrm{Si_3N_4}$ ...