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This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Ebeam resist removal is an essential step for multi-layer lithography processes where a clean and contamination free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by full NMP solution cycle remves the resist fully and leave the surface contamination free.

Here we will discuss our novel anisotropic wet-etching method that allows scalable fabrication of TMD metamaterials with atomic precision, combined with traditional nanolithography techniques.[1] We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are atomically sharp and exclusively zigzag-terminated. This allows us to fabricate interesting hexagonal nanostructures of predefined order and complexity, including a few nanometer thin nanoribbons and nanojunctions.

Thin silicon nitride nanomembranes are attracting growing attention following a novel fabrication method which consists in patterning them with a phononic crystal. In engineering the vibrational mode profile, the dominant mechanisms of loss, radiation loss and intrinsic material loss, are simultaneously addressed and mitigated. The fabrication method employed by the optomechanics group at the Laboratoire Kastler Brossel is here presented, only employing basic lithography techniques and wet etching processes.

In this report I monitor a full successful cycle of critical point drying (CPD) run for drying MEMS sensors after wet release using KOH etching. The pressure and temperature of the CPD tool (Tousimis) is monitored during the process and plotted in a P-T diagram with \mathrm{CO_2} critical point. A few notes for higher yield in the drying process are mentioned in this report as well.