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On the fabrication of high-surface-area and high-aspect-ratio gold nanostructures

We highlight some stability issues in high-surface-area and high-aspect ratio gold nanostructures fabricated using inorganic adhesion layers on silica substrates. We ascribe these problems to capillary and surface effects and show the use of organic silane self-assembled monolayers to improve the long-term stability of such structures.

Version
Version 1.0
Date
1 month ago
Lab
EPFL - NAM
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0
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157
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51
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1

Electron beam lithography and pattern transfer on membrane grids for transmission electron microscopy

We describe a fabrication process for electron beam lithography (EBL) and the following pattern transfer steps on transmission electron microscope (TEM) grids. For demonstration purposes, we use commercial off-the-shelf TEM grids consisting of a thin suspended silicon nitride membrane on a silicon frame supporting substrate. For the pattern transfer, we demonstrate both an additive patterning technique with metal deposition and lift-off, and a subtractive patterning technique with reactive ion etching. This process could enable direct ...

Version
Version 1.1
Date
2 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
378
Downloads
99
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3


Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
4 months, 3 weeks ago
Lab
EPFL - LPQM
Comments
0
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1340
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328
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3

Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Version
Version 1.0
Date
6 months ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
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0
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945
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270
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3


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