Abstract


Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

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  1. EPFL - LPQM

Citations


DOI 10.5281/zenodo.5092882
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  1. 1.0
    2 weeks, 6 days ago