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Photo by Simon Escobar Steinvall, EPFL - LMSC

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Efficient removing of ZEP ebeam resist after dry etching

Ebeam resist removal is an essential step for multi-layer lithography processes where a clean and contamination free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by full NMP solution cycle remves the resist fully and leave the surface contamination free.