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Photo by Matthias Neuenschwander, EPFL - LBNI

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Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
3 years, 3 months ago
Lab
EPFL - LPQM
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0
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Bulk and Sleeve Electron Beam Lithography for Silicon Nitride Photonic Crystals

This is a method to improve the quality of lithography - in particular electron beam lithography (EBL). During an EBL exposure the electrons undergo different scattering processes. One scattering process that plays an important role is the back scattering of the electrons from the substrate or different stacks of thin film present in the exposure stack. As a result the actual dose that the resist sees is quite different that the original exposure dose. This ...

Version
Version 1.0
Date
4 years, 3 months ago
Lab
EPFL - LPQM
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0
Viewed
2348
Downloads
1268
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1