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Photo by Mohammad Bereyhi, EPFL - LPQM

Results (5)


Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
2 months, 2 weeks ago
Lab
EPFL - LPQM
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0
Viewed
967
Downloads
194
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2

Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Version
Version 1.0
Date
3 months, 2 weeks ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
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0
Viewed
688
Downloads
166
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2

Fabrication of patterned silicon nitride nanomembranes at the LKB

Thin silicon nitride nanomembranes are attracting growing attention following a novel fabrication method which consists in patterning them with a phononic crystal. In engineering the vibrational mode profile, the dominant mechanisms of loss, radiation loss and intrinsic material loss, are simultaneously addressed and mitigated. The fabrication method employed by the optomechanics group at the Laboratoire Kastler Brossel is here presented, only employing basic lithography techniques and wet etching processes.

Version
Version 1.1
Date
11 months, 1 week ago
Lab
Sorbonne - Kastler-Brossel
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0
Viewed
2069
Downloads
499
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2


High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
1 year, 3 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
752
Downloads
449
Liked
1