Photo by Julien Dorsaz, EPFL - CMi

Results (1)

Efficient removing of ZEP ebeam resist after dry etching

Ebeam resist removal is an essential step for multi-layer lithography processes where a clean and contamination free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by full NMP solution cycle remves the resist fully and leave the surface contamination free.