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Photo by Matthias Neuenschwander, EPFL - LBNI

Results (5)



Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
2 weeks, 6 days ago
Lab
EPFL - LPQM
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0
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452
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56
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Critical point drying of suspended structures after wet etch

In this report I monitor a full successful cycle of critical point drying (CPD) run for drying MEMS sensors after wet release using KOH etching. The pressure and temperature of the CPD tool (Tousimis) is monitored during the process and plotted in a P-T diagram with \mathrm{CO_2} critical point. A few notes for higher yield in the drying process are mentioned in this report as well.

Version
Version 1.0
Date
1 year ago
Lab
EPFL - LPQM
Comments
7
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1464
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417
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2

Dependence of stress in thin Al films on deposition and post-deposition temperature conditions

Here we present our study of the stress dependence in Al thin films on deposition conditions. We consider two types of Al 100-nm thick films: E-beam evaporated films and films obtained by magnetron sputtering. We investigate the Al film stress hysteresis in the environment with slowly increasing and decreasing temperature, i.e. during the gradual annealing. We consider the effect of deposition temperature on the film stress and grain size. We conclude that the annealing of ...

Version
Version 1.0
Date
1 year ago
Lab
EPFL - LPQM
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0
Viewed
1166
Downloads
336
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1