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Photo by Julien Dorsaz, EPFL - CMi

Results (5)




Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
1 year, 2 months ago
Lab
EPFL - LPQM
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0
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1668
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529
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Critical point drying of suspended structures after wet etch

In this report I monitor a full successful cycle of critical point drying (CPD) run for drying MEMS sensors after wet release using KOH etching. The pressure and temperature of the CPD tool (Tousimis) is monitored during the process and plotted in a P-T diagram with \mathrm{CO_2} critical point. A few notes for higher yield in the drying process are mentioned in this report as well.

Version
Version 1.0
Date
2 years, 3 months ago
Lab
EPFL - LPQM
Comments
7
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1888
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661
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2

High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
2 years, 3 months ago
Lab
EPFL - LPQM
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0
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1039
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622
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2