Search

Tooltip
Photo by Mohammad Bereyhi, EPFL - LPQM

Results (5)



Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.

Version
Version 1.0
Date
3 months, 2 weeks ago
Lab
EPFL - LPQM
Comments
0
Viewed
1110
Downloads
245
Liked
3


High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
1 year, 4 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
797
Downloads
478
Liked
2

Fabrication of high-aspect ratio Si_3N_4 nanobeam resonators

We describe the fabrication of high-stress Si_3N_4 nanobeam resonators with high aspect ratios exceeding lengths of 3.5mm. The lowest order out-of-plane modes of these nanobeams have quality factors of Q\geq 10^6 with fundamental mode frequencies lying in the range of 80-500kHz. The beams are fabricated from high-stress, 20-50nm-thick films of Si_3N_4 deposited via LPCVD on standard silicon wafers. The beams are patterned via electron beam lithography and deep reactive ion etching. The underlying silicon is ...

Version
Version 1.0
Date
1 year, 4 months ago
Lab
EPFL - LPQM
Comments
2
Viewed
828
Downloads
394
Liked
2