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Results (4)


Electron beam lithography and pattern transfer on membrane grids for transmission electron microscopy

We describe a fabrication process for electron beam lithography (EBL) and the following pattern transfer steps on transmission electron microscope (TEM) grids. For demonstration purposes, we use commercial off-the-shelf TEM grids consisting of a thin suspended silicon nitride membrane on a silicon frame supporting substrate. For the pattern transfer, we demonstrate both an additive patterning technique with metal deposition and lift-off, and a subtractive patterning technique with reactive ion etching. This process could enable direct ...

Version
Version 1.1
Date
2 weeks, 5 days ago
Lab
EPFL - LPQM
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0
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124
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35
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3

Fabrication of patterned silicon nitride nanomembranes at the LKB

Thin silicon nitride nanomembranes are attracting growing attention following a novel fabrication method which consists in patterning them with a phononic crystal. In engineering the vibrational mode profile, the dominant mechanisms of loss, radiation loss and intrinsic material loss, are simultaneously addressed and mitigated. The fabrication method employed by the optomechanics group at the Laboratoire Kastler Brossel is here presented, only employing basic lithography techniques and wet etching processes.

Version
Version 1.1
Date
1 year ago
Lab
Sorbonne - Kastler-Brossel
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0
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2153
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536
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3

High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
1 year, 4 months ago
Lab
EPFL - LPQM
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0
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797
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478
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2

Fabrication of high-aspect ratio Si_3N_4 nanobeam resonators

We describe the fabrication of high-stress Si_3N_4 nanobeam resonators with high aspect ratios exceeding lengths of 3.5mm. The lowest order out-of-plane modes of these nanobeams have quality factors of Q\geq 10^6 with fundamental mode frequencies lying in the range of 80-500kHz. The beams are fabricated from high-stress, 20-50nm-thick films of Si_3N_4 deposited via LPCVD on standard silicon wafers. The beams are patterned via electron beam lithography and deep reactive ion etching. The underlying silicon is ...

Version
Version 1.0
Date
1 year, 4 months ago
Lab
EPFL - LPQM
Comments
2
Viewed
828
Downloads
394
Liked
2