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Photo by Matthias Neuenschwander, EPFL - LBNI

Results (5)


Efficient removing of ZEP ebeam resist after dry etching

Ebeam resist removal is an essential step for multi-layer lithography processes where a clean and contamination free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \mathrm{O_2} plasma exposure followed by full NMP solution cycle remves the resist fully and leave the surface contamination free.


Transition metal dichalcogenide metamaterials with atomic precision

Here we will discuss our novel anisotropic wet-etching method that allows scalable fabrication of TMD metamaterials with atomic precision, combined with traditional nanolithography techniques.[1] We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are atomically sharp and exclusively zigzag-terminated. This allows us to fabricate interesting hexagonal nanostructures of predefined order and complexity, including a few nanometer thin nanoribbons and nanojunctions.


Fabrication of patterned silicon nitride nanomembranes at the LKB

Thin silicon nitride nanomembranes are attracting growing attention following a novel fabrication method which consists in patterning them with a phononic crystal. In engineering the vibrational mode profile, the dominant mechanisms of loss, radiation loss and intrinsic material loss, are simultaneously addressed and mitigated. The fabrication method employed by the optomechanics group at the Laboratoire Kastler Brossel is here presented, only employing basic lithography techniques and wet etching processes.



Bulk and Sleeve Electron Beam Lithography for Silicon Nitride Photonic Crystals

This is a method to improve the quality of lithography - in particular electron beam lithography (EBL). During an EBL exposure the electrons undergo different scattering processes. One scattering process that plays an important role is the back scattering of the electrons from the substrate or different stacks of thin film present in the exposure stack. As a result the actual dose that the resist sees is quite different that the original exposure dose. This ...