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Photo by Matthias Neuenschwander, EPFL - LBNI

Results (5)



Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Version
Version 1.0
Date
1 month, 3 weeks ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
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0
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430
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84
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2

Transition metal dichalcogenide metamaterials with atomic precision

Here we will discuss our novel anisotropic wet-etching method that allows scalable fabrication of TMD metamaterials with atomic precision, combined with traditional nanolithography techniques.[1] We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are atomically sharp and exclusively zigzag-terminated. This allows us to fabricate interesting hexagonal nanostructures of predefined order and complexity, including a few nanometer thin nanoribbons and nanojunctions.

Version
Version 1.0
Date
2 months ago
Lab
DTU - Quantum Light Source
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0
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293
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104
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2

Critical point drying of suspended structures after wet etch

In this report I monitor a full successful cycle of critical point drying (CPD) run for drying MEMS sensors after wet release using KOH etching. The pressure and temperature of the CPD tool (Tousimis) is monitored during the process and plotted in a P-T diagram with \mathrm{CO_2} critical point. A few notes for higher yield in the drying process are mentioned in this report as well.

Version
Version 1.0
Date
1 year ago
Lab
EPFL - LPQM
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7
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1464
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417
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2

Bulk and Sleeve Electron Beam Lithography for Silicon Nitride Photonic Crystals

This is a method to improve the quality of lithography - in particular electron beam lithography (EBL). During an EBL exposure the electrons undergo different scattering processes. One scattering process that plays an important role is the back scattering of the electrons from the substrate or different stacks of thin film present in the exposure stack. As a result the actual dose that the resist sees is quite different that the original exposure dose. This ...

Version
Version 1.0
Date
1 year, 1 month ago
Lab
EPFL - LPQM
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0
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1215
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405
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1