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Photo by Matthias Neuenschwander, EPFL - LBNI

Results (5)


On the fabrication of high-surface-area and high-aspect-ratio gold nanostructures

We highlight some stability issues in high-surface-area and high-aspect ratio gold nanostructures fabricated using inorganic adhesion layers on silica substrates. We ascribe these problems to capillary and surface effects and show the use of organic silane self-assembled monolayers to improve the long-term stability of such structures.

Version
Version 1.0
Date
1 month ago
Lab
EPFL - NAM
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0
Viewed
157
Downloads
51
Liked
1

Monolithically integrated InGaAs microdisks on Si for nanophotonics

This work was presented at the Nanofabrication Photonics Online Meetup, 16-18 May 2021. Template-assisted selective epitaxy enables the local integration of group III-V semiconductors on Si with high material quality for nanophotonic applications. Here we demonstrate evidence of room temperature lasing at 1530 nm for a monolithically integrated InGaAs whispering gallery mode cavity on Si with a thickness of 300 nm and a diameter of 1.5 µm. These devices can potentially be scaled down further ...

Version
Version 1.0
Date
6 months ago
Lab
IBM Research Zurich - Materials Integration and Nanoscale Devices
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0
Viewed
945
Downloads
270
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3

Fabrication of patterned silicon nitride nanomembranes at the LKB

Thin silicon nitride nanomembranes are attracting growing attention following a novel fabrication method which consists in patterning them with a phononic crystal. In engineering the vibrational mode profile, the dominant mechanisms of loss, radiation loss and intrinsic material loss, are simultaneously addressed and mitigated. The fabrication method employed by the optomechanics group at the Laboratoire Kastler Brossel is here presented, only employing basic lithography techniques and wet etching processes.

Version
Version 1.1
Date
1 year, 1 month ago
Lab
Sorbonne - Kastler-Brossel
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0
Viewed
2264
Downloads
606
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3

High aspect ratio \mathrm{Si_3N_4} nanomembranes

A fabrication method for large-area, high-stress LPCVD \mathrm{Si_3N_4} membranes is presented. These devices can be used as mechanical resonators with very low dissipation, exploiting dissipation dilution. A phononic crystal pattern allows to work with a high-order localized mode, shielded from acoustic radiation in the substrate. The procedure is amenable to most research clean rooms, requiring conventional lithography techniques and wet etching in KOH for device undercut.

Version
Version 1.0
Date
1 year, 5 months ago
Lab
EPFL - LPQM
Comments
0
Viewed
877
Downloads
542
Liked
2

Fabrication of high-aspect ratio Si_3N_4 nanobeam resonators

We describe the fabrication of high-stress Si_3N_4 nanobeam resonators with high aspect ratios exceeding lengths of 3.5mm. The lowest order out-of-plane modes of these nanobeams have quality factors of Q\geq 10^6 with fundamental mode frequencies lying in the range of 80-500kHz. The beams are fabricated from high-stress, 20-50nm-thick films of Si_3N_4 deposited via LPCVD on standard silicon wafers. The beams are patterned via electron beam lithography and deep reactive ion etching. The underlying silicon is ...

Version
Version 1.0
Date
1 year, 5 months ago
Lab
EPFL - LPQM
Comments
2
Viewed
923
Downloads
441
Liked
2